BTD1805I3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTD1805I3 Specs and Replacement

Type Designator: BTD1805I3

SMD Transistor Code: D1805

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO251

BTD1805I3 Substitution

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BTD1805I3 datasheet

..1. Size:276K cystek

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Spec. No. C820I3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2012.09.19 Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur... See More ⇒

7.1. Size:297K cystek

btd1805j3.pdf pdf_icon

Spec. No. C820J3 Issued Date 2004.12.19 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V IC 5A BTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve... See More ⇒

7.2. Size:146K cystek

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Spec. No. C820T3 Issued Date 2007.07.09 CYStech Electronics Corp. Revised Date Page No. 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ... See More ⇒

7.3. Size:249K cystek

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Spec. No. C821D3 Issued Date 2006.11.23 CYStech Electronics Corp. Revised Date 2012.07.13 Page No. 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu... See More ⇒