BTD1805I3 Datasheet and Replacement

Spec. No. : C820I3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2012.09.19 Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. : C820J3 Issued Date : 2004.12.19 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/ 6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VIC 5ABTD1805J3 RCESAT 100m Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with ve

Spec. No. : C820T3 Issued Date : 2007.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features

Spec. No. : C821D3 Issued Date : 2006.11.23 CYStech Electronics Corp.Revised Date :2012.07.13 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805AD3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. : C820F3 Issued Date : 2011.12.01 CYStech Electronics Corp.Revised Date : 2011.12.16 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featu

Spec. No. : C820FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.10.29 Page No. : 1/ 7 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur

Spec. No. : C820D3 Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2005.04.20 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Featur