BTD1857AD3 Specs and Replacement

Type Designator: BTD1857AD3

SMD Transistor Code: D1857A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO126ML

 BTD1857AD3 Substitution

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BTD1857AD3 datasheet

 ..1. Size:165K  cystek

btd1857ad3.pdf pdf_icon

BTD1857AD3

Spec. No. C855D3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description High BV CEO High current capability Complementary to BTB1236AD3 Pb-free package Symbol Outline BTD1857AD3 TO-126ML B Base C Collector E Emitter E C B Absolute Maxim... See More ⇒

 6.1. Size:246K  cystek

btd1857am3.pdf pdf_icon

BTD1857AD3

Spec. No. C855M3-R Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BVCEO 160V IC 1.5A BTD1857AM3 RCESAT(MAX) 0.3 Description High BV CEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3 ... See More ⇒

 6.2. Size:159K  cystek

btd1857at3.pdf pdf_icon

BTD1857AD3

Spec. No. C855T3 Issued Date 2004.12.15 CYStech Electronics Corp. Revised Date 2006.06.12 Page No. 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Description High BV CEO High current capability Complementary to BTB1236AT3 Pb-free package Symbol Outline BTD1857AT3 TO-126 B Base C Collector E C B E Emitter Absolute Maximum... See More ⇒

 6.3. Size:182K  cystek

btd1857ae3.pdf pdf_icon

BTD1857AD3

Spec. No. C855E3 Issued Date 2004.08.06 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Description High BV CEO High current capability Complementary to BTB1236AE3 Pb-free lead plating package Symbol Outline BTD1857AE3 TO-220AB B Base C Collector E Emitter B C E ... See More ⇒

Detailed specifications: BTD1805BT3, BTD1805F3, BTD1805FP, BTD1805I3, BTD1805J3, BTD1816I3, BTD1816J3, BTD1857A3, BC557, BTD1857AE3, BTD1857AFP, BTD1857AI3, BTD1857AJ3, BTD1857AJ3G, BTD1857AL3, BTD1857AM3, BTD1857AT3

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