BTD2150AD3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD2150AD3
SMD Transistor Code: D2150A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO-126ML
BTD2150AD3 Transistor Equivalent Substitute - Cross-Reference Search
BTD2150AD3 Datasheet (PDF)
btd2150ad3.pdf
Spec. No. : C848D3 Issued Date : 2004.07.06 CYStech Electronics Corp.Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A
btd2150am3.pdf
Spec. No. : C848M3-A Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead
btd2150a3.pdf
Spec. No. : C848A3 Issued Date : 2005.02.04 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150A3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424A3
btd2150n3.pdf
Spec. No. : C848N3-A Issued Date : 2004.03.26 CYStech Electronics Corp.Revised Date : 2012.11.28 Page No. : 1/8 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 4ABTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a
btd2150fp.pdf
Spec. No. : C848FP Issued Date : 2011.09.14 CYStech Electronics Corp.Revised Date : 2011.11.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3ABTD2150FP RCESAT 125m typ.Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB1424FP Pb-free lead plati
btd2150l3.pdf
Spec. No. : C848L3 Issued Date : 2004.10.07 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150L3 RCESAT (Max) 145m Features Low V , V = 0.25V (typical), at I /I =2A/0.2A CE(sat) CE(sat) C B Excellent current gain characteristics Complementary to BTB1424L3 Pb-free package
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NSBC143ZPDXV6
History: NSBC143ZPDXV6
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