All Transistors. 2N6429 Datasheet

 

2N6429 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6429

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO92

2N6429 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6429 Datasheet (PDF)

5.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N6429

5.2. 2n6426 2n6427.pdf Size:212K _motorola

2N6429
2N6429

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6426/D Darlington Transistors 2N6426* NPN Silicon 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 12 Vdc Collector Cu

 5.3. 2n6427 1.pdf Size:49K _philips

2N6429
2N6429

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor 1997 Jul 04 Product specification File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10000). 2

5.4. 2n6427 mmbt6427.pdf Size:706K _fairchild_semi

2N6429
2N6429

2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-B

 5.5. 2n6426.pdf Size:295K _fairchild_semi

2N6429
2N6429

Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Voltag

5.6. 2n6428a.pdf Size:35K _samsung

2N6429

5.7. 2n6428.pdf Size:34K _samsung

2N6429

5.8. 2n6425.pdf Size:11K _semelab

2N6429

2N6425 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 300V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

5.9. 2n3583 2n3584 2n3585 2n4240 2n6420 2n6421 2n6422 2n6423.pdf Size:224K _bocasemi

2N6429
2N6429

A Boca Semiconductor Corp. http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com

5.10. 2n6420.pdf Size:148K _jmnic

2N6429
2N6429

JMnic Product Specification Silicon PNP Power Transistors 2N6420 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=-1A ·Power dissipation -PD=35W @TC=25? ·Complement to type 2N3583 APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers

5.11. 2n6420.pdf Size:188K _inchange_semiconductor

2N6429
2N6429

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25? ·Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switch

Datasheet: 2N6423 , 2N6424 , 2N6425 , 2N6425A , 2N6426 , 2N6427 , 2N6428 , 2N6428A , BC108 , 2N6429A , 2N643 , 2N6430 , 2N6431 , 2N6432 , 2N6433 , 2N6436 , 2N6436A .

 
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