2N643 Datasheet and Replacement
Type Designator: 2N643
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO9
2N643 Substitution
2N643 Datasheet (PDF)
2n6439re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6439/DThe RF LineNPN Silicon2N6439RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 VdcOutput Power = 60 Watts over 225 to 400 MHz Band60 W, 225 to 400 MHzMin
2n6436 2n6437 2n6438.pdf

Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)
2n6430 2n6431 2n6432 2n6433.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2N6425 , 2N6425A , 2N6426 , 2N6427 , 2N6428 , 2N6428A , 2N6429 , 2N6429A , BD140 , 2N6430 , 2N6431 , 2N6432 , 2N6433 , 2N6436 , 2N6436A , 2N6437 , 2N6437A .
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