2N6430 Specs and Replacement
Type Designator: 2N6430
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
2N6430 Substitution
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2N6430 datasheet
2n6430 2n6431 2n6432 2n6433.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N6430 2N6431 UNIT VCEO Collector Emitter Voltage 200 300 V VCBO Collector Base Voltage 200 300 V VEBO Emitter Base Volta... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Min... See More ⇒
Detailed specifications: 2N6425A, 2N6426, 2N6427, 2N6428, 2N6428A, 2N6429, 2N6429A, 2N643, 2SA1943, 2N6431, 2N6432, 2N6433, 2N6436, 2N6436A, 2N6437, 2N6437A, 2N6438
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