BTN2369N3 Specs and Replacement
Type Designator: BTN2369N3
SMD Transistor Code: 1J
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT-23
BTN2369N3 Substitution
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BTN2369N3 datasheet
Spec. No. C229N3 Issued Date 2004.08.09 CYStech Electronics Corp. Revised Date 2013.02.23 Page No. 1/6 High Frequency NPN Switching Transistor BTN2369N3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=500mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating and halogen-free package Symbol Outline BTN... See More ⇒
Spec. No. C229S3 Issued Date 2011.10.05 CYStech Electronics Corp. Revised Date Page No. 1/6 High Frequency NPN Switching Transistor BTN2369S3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT) Pb-free lead plating package Symbol Outline BTN2369S3 SOT-323 B Base ... See More ⇒
Spec. No. C229A3 Issued Date 2004.08.09 CYStech Electronics Corp. Revised Date Page No. 1/3 High Frequency NPN Switching Transistor BTN2369A3 Description High transition frequency, f =500MHz(min) T High current, IC(max)=200mA Low saturation voltage, V =0.3V(max) CE(SAT) Symbol Outline BTN2369A3 TO-92 B Base C Collector E Emitter C B E ... See More ⇒
Detailed specifications: BTN1053K3, BTN1053L3, BTN1053M3, BTN1101E3, BTN2222A3, BTN2222AL3, BTN2222AN3, BTN2369A3, TIP32C, BTN2369S3, BTN3501E3, BTN3501F3, BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3
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History: 2SB986R
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