All Transistors. BTN3501E3 Datasheet

 

BTN3501E3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTN3501E3
   SMD Transistor Code: N3501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-220AB

 BTN3501E3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTN3501E3 Datasheet (PDF)

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btn3501e3.pdf

BTN3501E3 BTN3501E3

Spec. No. : C606E3 Issued Date : 2004.08.18 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Symbol Outline BTN3501E3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter S

 7.1. Size:218K  cystek
btn3501i3.pdf

BTN3501E3 BTN3501E3

Spec. No. : C606I3 Issued Date : 2003.11.25 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501I3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-251 BTN3501I3 BBase CCollector B

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btn3501j3.pdf

BTN3501E3 BTN3501E3

Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2013.10.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501J3 VCESAT 0.6V (max.) Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN3501J3TO-252(DPAK) BBase CCol

 7.3. Size:195K  cystek
btn3501f3.pdf

BTN3501E3 BTN3501E3

Spec. No. : C606F3 Issued Date : 2005.11.24 CYStech Electronics Corp.Revised Date : 2005.11.30 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTN3501F3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free package Symbol Outline BTN3501F3 TO-263 CBE BBase B C E CCollector EEmitter Absolute

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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