BTN3501E3 Datasheet. Specs and Replacement

Type Designator: BTN3501E3  📄📄 

SMD Transistor Code: N3501

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 130 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-220AB

 BTN3501E3 Substitution

- BJT ⓘ Cross-Reference Search

 

BTN3501E3 datasheet

 ..1. Size:167K  cystek

 btn3501e3.pdf pdf_icon

BTN3501E3

Spec. No. C606E3 Issued Date 2004.08.18 CYStech Electronics Corp. Revised Date Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Symbol Outline BTN3501E3 TO-220AB B Base C Collector E Emitter B C E Absolute Maximum Ratings (Ta=25 C) Parameter S... See More ⇒

 7.1. Size:218K  cystek

 btn3501i3.pdf pdf_icon

BTN3501E3

Spec. No. C606I3 Issued Date 2003.11.25 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80V IC 8A BTN3501I3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-251 BTN3501I3 B Base C Collector B... See More ⇒

 7.2. Size:259K  cystek

 btn3501j3.pdf pdf_icon

BTN3501E3

Spec. No. C606J3 Issued Date 2003.10.07 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80V IC 8A BTN3501J3 VCESAT 0.6V (max.) Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN3501J3 TO-252(DPAK) B Base C Col... See More ⇒

 7.3. Size:195K  cystek

 btn3501f3.pdf pdf_icon

BTN3501E3

Spec. No. C606F3 Issued Date 2005.11.24 CYStech Electronics Corp. Revised Date 2005.11.30 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTN3501F3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free package Symbol Outline BTN3501F3 TO-263 C B E B Base B C E C Collector E Emitter Absolute... See More ⇒

SHOW MORE

Detailed specifications: BTN1053M3, BTN1101E3, BTN2222A3, BTN2222AL3, BTN2222AN3, BTN2369A3, BTN2369N3, BTN2369S3, D882P, BTN3501F3, BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3, BTN5551A3, BTN5551K3

Keywords - BTN3501E3 pdf specs

 BTN3501E3 cross reference

 BTN3501E3 equivalent finder

 BTN3501E3 pdf lookup

 BTN3501E3 substitution

 BTN3501E3 replacement