All Transistors. BTN3501F3 Datasheet

 

BTN3501F3 Datasheet and Replacement


   Type Designator: BTN3501F3
   SMD Transistor Code: N3501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-263
      - BJT Cross-Reference Search

   

BTN3501F3 Datasheet (PDF)

 ..1. Size:195K  cystek
 btn3501f3.pdf pdf_icon

BTN3501F3

Spec. No. : C606F3 Issued Date : 2005.11.24 CYStech Electronics Corp.Revised Date : 2005.11.30 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTN3501F3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free package Symbol Outline BTN3501F3 TO-263 CBE BBase B C E CCollector EEmitter Absolute

 7.1. Size:218K  cystek
 btn3501i3.pdf pdf_icon

BTN3501F3

Spec. No. : C606I3 Issued Date : 2003.11.25 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501I3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-251 BTN3501I3 BBase CCollector B

 7.2. Size:259K  cystek
 btn3501j3.pdf pdf_icon

BTN3501F3

Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2013.10.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501J3 VCESAT 0.6V (max.) Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN3501J3TO-252(DPAK) BBase CCol

 7.3. Size:167K  cystek
 btn3501e3.pdf pdf_icon

BTN3501F3

Spec. No. : C606E3 Issued Date : 2004.08.18 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Symbol Outline BTN3501E3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter S

SHOW MORE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BC847CTT1 | 2SD1133D | 2SC2712Y | BLW21 | 2DI150D-050 | FT411 | 2SC3464M

Keywords - BTN3501F3 transistor datasheet

 BTN3501F3 cross reference
 BTN3501F3 equivalent finder
 BTN3501F3 lookup
 BTN3501F3 substitution
 BTN3501F3 replacement

 

 
Back to Top

 


 
.