All Transistors. BTN3501F3 Datasheet

 

BTN3501F3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTN3501F3
   SMD Transistor Code: N3501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-263

 BTN3501F3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTN3501F3 Datasheet (PDF)

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btn3501f3.pdf

BTN3501F3
BTN3501F3

Spec. No. : C606F3 Issued Date : 2005.11.24 CYStech Electronics Corp.Revised Date : 2005.11.30 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTN3501F3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free package Symbol Outline BTN3501F3 TO-263 CBE BBase B C E CCollector EEmitter Absolute

 7.1. Size:218K  cystek
btn3501i3.pdf

BTN3501F3
BTN3501F3

Spec. No. : C606I3 Issued Date : 2003.11.25 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501I3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-251 BTN3501I3 BBase CCollector B

 7.2. Size:259K  cystek
btn3501j3.pdf

BTN3501F3
BTN3501F3

Spec. No. : C606J3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2013.10.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8ABTN3501J3 VCESAT 0.6V (max.) Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN3501J3TO-252(DPAK) BBase CCol

 7.3. Size:167K  cystek
btn3501e3.pdf

BTN3501F3
BTN3501F3

Spec. No. : C606E3 Issued Date : 2004.08.18 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Symbol Outline BTN3501E3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter S

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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