BTN8050A3 Specs and Replacement
Type Designator: BTN8050A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO-92
BTN8050A3 Substitution
- BJT ⓘ Cross-Reference Search
BTN8050A3 datasheet
Spec. No. C223A3 Issued Date 2003.07.30 CYStech Electronics Corp. Revised Date 2013.05.21 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementary t... See More ⇒
Spec. No. C223A3-B Issued Date 2004.02.18 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementa... See More ⇒
Detailed specifications: BTN3904A3, BTN3904N3, BTN3904S3, BTN5551A3, BTN5551K3, BTN6427N3, BTN6718A3, BTN6718D3, BD139, BTN8050BA3, BTN13003D3, BTN13003T3, BTNA06N3, BTNA14A3, BTNA14N3, BTNA42A3, BTNA44A3
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