BTN8050A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN8050A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO-92
BTN8050A3 Transistor Equivalent Substitute - Cross-Reference Search
BTN8050A3 Datasheet (PDF)
btn8050a3.pdf
Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp.Revised Date : 2013.05.21 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementary t
btn8050ba3.pdf
Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp.Revised Date : 2012.10.03 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GE10008
