All Transistors. 2N6432 Datasheet

 

2N6432 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6432

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 Ā°C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

2N6432 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6432 Datasheet (PDF)

1.1. 2n6430 2n6431 2n6432 2n6433.pdf Size:104K _central

2N6432
2N6432

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N6432

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5.2. 2n6439re.pdf Size:127K _motorola

2N6432
2N6432

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Minimum Ga

5.3. 2n6436 2n6437 2n6438.pdf Size:178K _motorola

2N6432
2N6432

Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N6437 Transistors 2N6438 * . . . designed for use in industrial–military power amplifier and switching circuit *Motorola Preferred Device applications. • High Collector–Emitter Sustaining Voltage — 25 AMPERE VCEO(sus) = 80 Vdc (Min) — 2N6436 POWER TRANSISTORS VCEO(sus) = 100 Vdc (M

5.4. 2n6439.pdf Size:137K _macom

2N6432
2N6432

Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Minimum Gain = 7.8 d

5.5. 2n6436 2n6437 2n6438.pdf Size:198K _bocasemi

2N6432
2N6432

A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com

5.6. 2n6430 31.pdf Size:257K _cdil

2N6432
2N6432

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6430 2N6431 UNIT VCEO Collector Emitter Voltage 200 300 V VCBO Collector Base Voltage 200 300 V VEBO Emitter Base Voltage 6

5.7. 2n6436 2n6437 2n6438.pdf Size:118K _inchange_semiconductor

2N6432
2N6432

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ŠˇĀ¤ With TO-3 package ŠˇĀ¤ High DC current gain ŠˇĀ¤ Fast switching times ŠˇĀ¤ Low collector saturation voltage ŠˇĀ¤ Complement to type 2N6338~2N6341 APPLICATIONS ŠˇĀ¤ For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DE

Datasheet: 2N6427 , 2N6428 , 2N6428A , 2N6429 , 2N6429A , 2N643 , 2N6430 , 2N6431 , S8550 , 2N6433 , 2N6436 , 2N6436A , 2N6437 , 2N6437A , 2N6438 , 2N6438A , 2N6439 .

 


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