All Transistors. BTP8550BA3 Datasheet

 

BTP8550BA3 Datasheet and Replacement


   Type Designator: BTP8550BA3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92
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BTP8550BA3 Datasheet (PDF)

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BTP8550BA3

Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp.Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen

 7.1. Size:163K  cystek
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BTP8550BA3

Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp.Revised Date : 2007.04.19Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT

 7.2. Size:259K  cystek
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BTP8550BA3

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESATBTP8550N3Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 BBase CCollector EEmitter Absolute Maxi

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD874A-R | BFQ56 | DTB543XE | MMDT2227Q | DDTC114EUA | DTC123E | 2SD189

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