All Transistors. BTP8550N3 Datasheet

 

BTP8550N3 Datasheet and Replacement


   Type Designator: BTP8550N3
   SMD Transistor Code: B9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
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BTP8550N3 Datasheet (PDF)

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BTP8550N3

Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp.Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESATBTP8550N3Features Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. Complementary to BTN8050N3. Pb-free package Symbol Outline BTP8550N3 SOT-23 BBase CCollector EEmitter Absolute Maxi

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BTP8550N3

Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp.Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complemen

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BTP8550N3

Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp.Revised Date : 2007.04.19Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BT

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FZT560 | CH867UPNGP | AFY29 | ET5065 | NJD2873T4G | 2SD1348S | SMUN5215DW

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