2N6436A Specs and Replacement
Type Designator: 2N6436A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 700 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N6436A Substitution
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2N6436A datasheet
Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N6437 Transistors 2N6438 * . . . designed for use in industrial military power amplifier and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining Voltage 25 AMPERE VCEO(sus) = 80 Vdc (Min) 2N6436 POWER TRANSISTORS VCEO(sus)... See More ⇒
A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com ... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338 2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT... See More ⇒
Detailed specifications: 2N6429, 2N6429A, 2N643, 2N6430, 2N6431, 2N6432, 2N6433, 2N6436, TIP3055, 2N6437, 2N6437A, 2N6438, 2N6438A, 2N6439, 2N644, 2N6441, 2N6442
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