All Transistors. 2N6436A Datasheet

 

2N6436A Datasheet and Replacement


   Type Designator: 2N6436A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 700 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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2N6436A Datasheet (PDF)

 8.1. Size:178K  motorola
 2n6436 2n6437 2n6438.pdf pdf_icon

2N6436A

Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)

 8.2. Size:198K  bocasemi
 2n6436 2n6437 2n6438.pdf pdf_icon

2N6436A

ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

 8.3. Size:118K  inchange semiconductor
 2n6436 2n6437 2n6438.pdf pdf_icon

2N6436A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338~2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD1799 | 2SB1188SQ-R | 2SA833 | 3DF5 | NSS40601CF8 | DTA144WET1G | 2SB323

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