All Transistors. BU941ZE3 Datasheet

 

BU941ZE3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BU941ZE3

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO-220AB

BU941ZE3 Transistor Equivalent Substitute - Cross-Reference Search

 

BU941ZE3 Datasheet (PDF)

1.1. bu941ze3.pdf Size:221K _cystek

BU941ZE3
BU941ZE3

Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18Ω Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivale

4.1. bu941zt bu941ztfp bub941zt.pdf Size:89K _update

BU941ZE3
BU941ZE3

BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX ”T4”) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I

4.2. bu941ztfp-zt bub941zt.pdf Size:413K _update

BU941ZE3
BU941ZE3

BU941ZT/BU941ZTFP BUB941ZT ® HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI

 4.3. bu941zt bu941ztfp bub941zt.pdf Size:89K _st

BU941ZE3
BU941ZE3

BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX ”T4”) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I

4.4. bu941ztfp-zt bub941zt.pdf Size:413K _st

BU941ZE3
BU941ZE3

BU941ZT/BU941ZTFP BUB941ZT ® HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI

 4.5. bu941zpfi.pdf Size:226K _inchange_semiconductor

BU941ZE3
BU941ZE3

isc Silicon NPN Darlington Power Transistor BU941ZPFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 350V(Min.) CEO(SUS) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T

4.6. bu941zp.pdf Size:218K _inchange_semiconductor

BU941ZE3
BU941ZE3

isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(TB B=25℃) a SYMBOL PARAMETER VALUE UNIT V Colle

4.7. bu941zt.pdf Size:211K _inchange_semiconductor

BU941ZE3
BU941ZE3

isc Silicon NPN Power Transistor BU941ZT DESCRIPTION ·High Voltage ·DARLINGTON ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage

4.8. bu941zle3.pdf Size:247K _cystek

BU941ZE3
BU941ZE3

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent

4.9. bu941zfp.pdf Size:220K _cystek

BU941ZE3
BU941ZE3

Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B

4.10. bu941zp3.pdf Size:243K _cystek

BU941ZE3
BU941ZE3

Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp. Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions

4.11. bu941zf3.pdf Size:242K _cystek

BU941ZE3
BU941ZE3

Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp. Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline TO-263

Datasheet: 2SA730 , 2SA731 , 2SA732 , 2SA733 , 2SA738 , 2SA739 , 2SA74 , 2SA740 , C103 , 2SA741 , 2SA741H , 2SA742 , 2SA742H , 2SA743 , 2SA743A , 2SA744 , 2SA745 .

 

 
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