2N6437 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6437
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 700 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N6437 Transistor Equivalent Substitute - Cross-Reference Search
2N6437 Datasheet (PDF)
2n6436 2n6437 2n6438.pdf
Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)
2n6436 2n6437 2n6438.pdf
ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6436 2n6437 2n6438.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338~2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT
2n6439re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6439/DThe RF LineNPN Silicon2N6439RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 VdcOutput Power = 60 Watts over 225 to 400 MHz Band60 W, 225 to 400 MHzMin
2n6430 2n6431 2n6432 2n6433.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n6439.pdf
Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6439/DThe RF LineNPN Silicon2N6439RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 VdcOutput Power = 60 Watts over 225 to 400 MHz Band60 W, 225 to 400 MHzMinimum Gain
2n6430 31.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON TRANSISTORS 2N6430, 6431TO-18Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N6430 2N6431 UNITVCEOCollector Emitter Voltage 200 300 VVCBOCollector Base Voltage 200 300 VVEBOEmitter Base Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
