All Transistors. D45H11E3 Datasheet

 

D45H11E3 Datasheet and Replacement


   Type Designator: D45H11E3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 230 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-220
 

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D45H11E3 Datasheet (PDF)

 ..1. Size:247K  cystek
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D45H11E3

Spec. No. : C607E3 Issued Date : 2007.03.07 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor D45H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11E3 TO-220 BBase CCollector EEmitter B C E Ordering

 8.1. Size:103K  motorola
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D45H11E3

Order this documentMOTOROLAby D44H/DSEMICONDUCTOR TECHNICAL DATANPND44H Series*Complementary Silicon PowerPNPD45H Series*Transistors. . . for general purpose power amplification and switching such as output or driver*Motorola Preferred Devicestages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation V

 8.2. Size:192K  motorola
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D45H11E3

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 8.3. Size:174K  st
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D45H11E3

D44H11FPD45H11FPComplementary power transistors .Features Low collector-emitter saturation voltage Fast switching speedApplications Power amplifier 321 Switching circuitsTO-220FPDescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral purpose linear an

Datasheet: BTPA94N3 , BU941ZE3 , BU941ZF3 , BU941ZFP , BU941ZLE3 , BU941ZP3 , D44H11E3 , D44H11J3 , BD135 , D45H11J3 , DTA144WS3 , FBP5096G3 , HBA1873S5 , HBA8573S6R , HBC8471S6R , HBC8472S6R , HBN2411S6R .

History: TD13005 | CTP1033 | 3CA1370 | 2SA505O | DTC123YKAFRA | 2SC979 | MP506

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