All Transistors. HBN2412C6 Datasheet

 

HBN2412C6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HBN2412C6
   SMD Transistor Code: MA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-563

 HBN2412C6 Transistor Equivalent Substitute - Cross-Reference Search

   

HBN2412C6 Datasheet (PDF)

 ..1. Size:269K  cystek
hbn2412c6.pdf

HBN2412C6
HBN2412C6

Spec. No. : C202C6 Issued Date : 2014.05.11 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2412C6 Features Two BTC2412 chips in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounti

 7.1. Size:256K  cystek
hbn2412s6r.pdf

HBN2412C6
HBN2412C6

Spec. No. : C202S6R Issued Date : 2003.06.11 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2412S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 8.1. Size:279K  cystek
hbn2411s6r.pdf

HBN2412C6
HBN2412C6

Spec. No. : C203S6R Issued Date : 2003.09.12 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/ 8 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2411S6R Features Two BTC2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

 9.1. Size:271K  cystek
hbn2444s6r.pdf

HBN2412C6
HBN2412C6

Spec. No. : C223S6-R Issued Date : 2005.06.29 CYStech Electronics Corp.Revised Date :2012.10.03 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor HBN2444S6R (Dual Transistors) Features Two BTD2444 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PBSS4160PANP | 2SD1749

 

 
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