2N6437A Datasheet and Replacement
Type Designator: 2N6437A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 700 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N6437A Substitution
2N6437A Datasheet (PDF)
2n6436 2n6437 2n6438.pdf

Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)
2n6436 2n6437 2n6438.pdf

ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6436 2n6437 2n6438.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338~2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT
Datasheet: 2N643 , 2N6430 , 2N6431 , 2N6432 , 2N6433 , 2N6436 , 2N6436A , 2N6437 , TIP122 , 2N6438 , 2N6438A , 2N6439 , 2N644 , 2N6441 , 2N6442 , 2N6443 , 2N6444 .
History: HE8550 | LBC559AP | MJ10025 | 2SD404G | BF367 | 2SA1386AY | 2SCR293PFRA
Keywords - 2N6437A transistor datasheet
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History: HE8550 | LBC559AP | MJ10025 | 2SD404G | BF367 | 2SA1386AY | 2SCR293PFRA



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