HBP1037S6R Specs and Replacement
Type Designator: HBP1037S6R
SMD Transistor Code: A2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-363R
HBP1037S6R Substitution
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HBP1037S6R datasheet
Spec. No. C306S6R Issued Date 2003.09.12 CYStech Electronics Corp. Revised Date 2014.03.14 Page No. 1/7 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP1037S6R Features Two BTA1037 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference... See More ⇒
Spec. No. C306C6 Issued Date 2012.09.28 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP1037C6 Features Two BTA1037 chips in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminating interference. Mountin... See More ⇒
Spec. No. C305S6R Issued Date 2003.10.17 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP1036S6R Features Two BTA1036 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. ... See More ⇒
Detailed specifications: HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, HBNPZ1NS6R, HBP1036S6R, HBP1037C6, HBP1037S5, D965, HBP2907S6R, HQN2498QF, HQP1498QF, PZT2222AL3, PZT5551L3, STBV32A3, TIP31CE3, TIP31CJ3
Keywords - HBP1037S6R pdf specs
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