2SC5253 Specs and Replacement

Type Designator: 2SC5253

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Collector Current |Ic max|: 6 A

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 9

Noise Figure, dB: -

Package: TO220

 2SC5253 Substitution

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2SC5253 datasheet

 8.1. Size:177K  toshiba

2sc5254.pdf pdf_icon

2SC5253

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1... See More ⇒

 8.2. Size:180K  toshiba

2sc5255.pdf pdf_icon

2SC5253

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1... See More ⇒

 8.3. Size:182K  toshiba

2sc5259.pdf pdf_icon

2SC5253

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 8.4. Size:126K  toshiba

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2SC5253

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Detailed specifications: NE68000, NE68018, NE68019, NE68030, NE68033, NE68035, NE68039, 2SC5618, B647, 2SC5855A, H1061, 2SD5703, H945R, H945Q, H945P, H945K, H945

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