DB805D Datasheet, Equivalent, Cross Reference Search
Type Designator: DB805D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: DIP8
DB805D Transistor Equivalent Substitute - Cross-Reference Search
DB805D Datasheet (PDF)
..1. Size:210K jilin sino
db805d.pdf
db805d.pdf
R NPN SR_Ngp R SR_NgpR SR_NgpR SR_NgpDual NPN high voltage transistors in a single package RDB805D N'YNSe MAIN CHARACTERISTICS N'YNSeN'YNSeN'YNSe Package
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BFN20