NJW0302G Specs and Replacement

Type Designator: NJW0302G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO3P

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NJW0302G datasheet

 ..1. Size:80K  onsemi

 njw0281g njw0302g.pdf pdf_icon

NJW0302G

NJW0281G (NPN) NJW0302G (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With http //onsemi.com superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and 15 AMPERES ... See More ⇒

 ..2. Size:949K  cn evvo

 njw0302g.pdf pdf_icon

NJW0302G

NJW0302G Silicon PNP transistor Power Amplifier Applications Complementary to NJW0281G High collector voltage VCEO=-230V(min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to de... See More ⇒

 ..3. Size:155K  cn minos

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NJW0302G

NJW0302G Transistor Silicon PNP Epitaxial Type NJW0302G Power Amplifier Applications Complementaryto NJW0281G High collector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis produc... See More ⇒

 ..4. Size:240K  inchange semiconductor

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NJW0302G

isc Silicon PNP Power Transistor NJW0302G DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0281G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ... See More ⇒

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Detailed specifications: C8050B, C8050C, C8050D, NE685M13, S8050MB, S8050MC, S8050MD, NJW0281G, 2SD2499, 2SC5614, 2SC5800, 2SD2195, 2SD2398, 2SD2004, 2SA1193K, 129NT1A-1, 129NT1B-1

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