2SC5800 Specs and Replacement

Type Designator: 2SC5800

SMD Transistor Code: 80

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 9 V

Maximum Collector-Emitter Voltage |Vce|: 5.5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: ULTRA-SUPER-MINIMOLD

 2SC5800 Substitution

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2SC5800 datasheet

 ..1. Size:104K  nec

2sc5800.pdf pdf_icon

2SC5800

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm... See More ⇒

 8.1. Size:30K  sanyo

2sc5808.pdf pdf_icon

2SC5800

Ordering number ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Base 2 Collector 1 2 3 3 Emitter 4 Collector... See More ⇒

 8.2. Size:100K  nec

2sc5801.pdf pdf_icon

2SC5800

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re... See More ⇒

 8.3. Size:78K  panasonic

2sc5809.pdf pdf_icon

2SC5800

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For high breakdown voltage high-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in Excellent package with withstan... See More ⇒

Detailed specifications: C8050D, NE685M13, S8050MB, S8050MC, S8050MD, NJW0281G, NJW0302G, 2SC5614, SS8050, 2SD2195, 2SD2398, 2SD2004, 2SA1193K, 129NT1A-1, 129NT1B-1, 129NT1V-1, 129NT1G-1

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