K129NT1G-1 Specs and Replacement
Type Designator: K129NT1G-1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
K129NT1G-1 Substitution
- BJT ⓘ Cross-Reference Search
K129NT1G-1 datasheet
Detailed specifications: 129NT1V-1, 129NT1G-1, 129NT1D-1, 129NT1E-1, 129NT1ZH-1, K129NT1A-1, K129NT1B-1, K129NT1V-1, 2SC5198, K129NT1D-1, K129NT1E-1, K129NT1ZH-1, 159NT1A, 159NT1B, 159NT1V, 159NT1G, 159NT1D
Keywords - K129NT1G-1 pdf specs
K129NT1G-1 cross reference
K129NT1G-1 equivalent finder
K129NT1G-1 pdf lookup
K129NT1G-1 substitution
K129NT1G-1 replacement

