K159NT1G Specs and Replacement

Type Designator: K159NT1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

 K159NT1G Substitution

- BJT ⓘ Cross-Reference Search

 

K159NT1G datasheet

 7.1. Size:444K  russia

 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

K159NT1G

... See More ⇒

Detailed specifications: 159NT1B, 159NT1V, 159NT1G, 159NT1D, 159NT1E, K159NT1A, K159NT1B, K159NT1V, TIP142, K159NT1D, K159NT1E, 1129NTV1, B1129NT1V-1, CS13001, CS13002, CS13003, T5609

Keywords - K159NT1G pdf specs

 K159NT1G cross reference

 K159NT1G equivalent finder

 K159NT1G pdf lookup

 K159NT1G substitution

 K159NT1G replacement