K159NT1E Specs and Replacement

Type Designator: K159NT1E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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K159NT1E datasheet

 7.1. Size:444K  russia

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K159NT1E

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Detailed specifications: 159NT1G, 159NT1D, 159NT1E, K159NT1A, K159NT1B, K159NT1V, K159NT1G, K159NT1D, MPSA42, 1129NTV1, B1129NT1V-1, CS13001, CS13002, CS13003, T5609, T5610, TPT5609

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