2SA1930I Specs and Replacement
Type Designator: 2SA1930I
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 26 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO251
2SA1930I Substitution
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2SA1930I datasheet
2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d... See More ⇒
2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features High f , complementary pair with 2SC5171I(3DA5171I). T /Absolute maximum ratings(Ta=25 ) ... See More ⇒
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base v... See More ⇒
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features High f , complementary pair with 2SC5171S(3DA5171S). T /Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: T5609, T5610, TPT5609, TPT5610, 2SC4977, 2SA1013T, 2SA1015M, 2SA1577W, BD222, 2SA2050, 2SA3802, 2SA562M, 2SA715F, 2SA733M, 2SA933A, 2SA953M, 2SA966T
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