2N6457 Specs and Replacement
Type Designator: 2N6457
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO128
2N6457 Substitution
- BJT ⓘ Cross-Reference Search
2N6457 datasheet
Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derati... See More ⇒
Databook.fxp 1/13/99 2 09 PM Page B-25 01/99 B-25 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6451 2N6452 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers... See More ⇒
Databook.fxp 1/13/99 2 09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers 2N6453 2N6454 Low-Noise, High Gain Reverse Gate Source Voltage 20 V 25 V Amplifiers Reverse Gate Drain Voltage 20 V 25 V Continuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers... See More ⇒
Detailed specifications: 2N6444, 2N6445, 2N6446, 2N6447, 2N6448, 2N645, 2N6455, 2N6456, MJE340, 2N6458, 2N6459, 2N646, 2N6460, 2N6461, 2N6462, 2N6463, 2N6464
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