2N6459 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6459
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: X92
2N6459 Transistor Equivalent Substitute - Cross-Reference Search
2N6459 Datasheet (PDF)
2n6449 2n6450.pdf
Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati
2n6451 2n6452.pdf
Databook.fxp 1/13/99 2:09 PM Page B-2501/99 B-252N6451, 2N6452N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6451 2N6452 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
2n6453 2n6454.pdf
Databook.fxp 1/13/99 2:09 PM Page B-26B-26 01/992N6453, 2N6454N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6453 2N6454 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers
Datasheet: 2N6446 , 2N6447 , 2N6448 , 2N645 , 2N6455 , 2N6456 , 2N6457 , 2N6458 , BD777 , 2N646 , 2N6460 , 2N6461 , 2N6462 , 2N6463 , 2N6464 , 2N6465 , 2N6466 .
