2SC752TM Specs and Replacement

Type Designator: 2SC752TM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

 2SC752TM Substitution

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2SC752TM datasheet

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2SC752TM

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics ... See More ⇒

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2SC752TM

2SC752TM(BR3DG752TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High transition frequency, low saturation voltage, high speed switching time. / Applications Ultra high speed switchi... See More ⇒

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2SC752TM

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2SC752TM

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Detailed specifications: 2SC4155A, 2SC4458L, 2SC4793D, 2SC5171I, 2SC5171S, 2SC536KM, 2SC536M, 2SC5371, A940, 2SC945M, 2SD1273AF, 2SD1273F, 2SD1710A, 2SD1710F, 2SD1899L, 2SD1936M, 2SD2159

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