2SD882T Specs and Replacement

Type Designator: 2SD882T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT89

 2SD882T Substitution

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2SD882T datasheet

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2SD882T

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2SD882T

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒

 8.1. Size:106K  st

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2SD882T

2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications 1 Voltage regulation 2 3 Relay driver SOT-32 Generic switch (TO-126) Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology r... See More ⇒

 8.2. Size:165K  nec

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2SD882T

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Detailed specifications: 2SD1936M, 2SD2159, 2SD2603, 2SD882B, 2SD882D, 2SD882I, 2SD882L, 2SD882N, 9014, 2SD965T, 3CD2051, 3CD910, 3CG751, 3DD5023, 3DD5024, 8050M, 8050T

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