2SD965T Datasheet, Equivalent, Cross Reference Search

2SD965T Transistor Equivalent Substitute - Cross-Reference Search

2SD965T Datasheet (PDF)

1.1. 2sd965t.pdf Size:1165K _blue-rocket-elect

2SD965T(BR3DG965T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,高性能。 Low VCE(sat),high performance. 用途 / Applications 用于音频输出放大。 Audio frequency output amplifier. 内部等效电路 / Equivalent Circuit 引脚�

4.1. 2sd965-q.pdf Size:176K _update

Product specification 2SD965-Q Unit:mm SOT-89 1.50 ±0.1 4.50±0.1 1.80±0.1 ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44±0.1 0.48±0.1 0.53±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating

4.2. 2sd965k.pdf Size:124K _update

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C

 4.3. gst2sd965.pdf Size:382K _upd

GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)

4.4. 2sd965.pdf Size:39K _panasonic

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll

 4.5. 2sd965 e.pdf Size:43K _panasonic

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Coll

4.6. 2sd965.pdf Size:18K _utc

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base volt

4.7. 2sd965a.pdf Size:101K _secos

2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 ? Audio amplifier 1 ? Flasg unit of camera 2 3 A ? Switching circuit E C B C E B D CLASSIFICATION OF hFE(2) Rank Q R S F G 230 - 380 Range 340 - 600 560 - 800 H K J L Millimeter Mil

4.8. 2sd965.pdf Size:335K _htsemi

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V IC C

4.9. 2sd965a.pdf Size:555K _htsemi

2SD 965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V 3 Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC Collector Current -Continuous 5 A Collec

4.10. 2sd965a.pdf Size:206K _lge

2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value

4.11. 2sd965.pdf Size:828K _wietron

WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 42 V Collector-Emitter Voltage VCEO 22 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous I

4.12. 2sd965.pdf Size:1219K _kexin

SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation and Current ● Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

4.13. 2sd965a.pdf Size:321K _kexin

SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 ■ Features ● Audio amplifier ● Flash unit of camera ● Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C

4.14. 2sd965a.pdf Size:250K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V

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