8550T Datasheet and Replacement
Type Designator: 8550T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: SOT89
8550T Substitution
8550T Datasheet (PDF)
8550t.pdf

8550T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 8050T Complementary pair with 8050T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2
s8550t.pdf

S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-924.55 0.2 3.5 0.2 (1.27 Typ.)FEATURES 1.25 0.21 2 3 Excellent hFE linearity 2.54 0.11: Emitter2: Base3: Collector 0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings Unit
m8550t.pdf

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE AD Power Dissipation BE CFG H1Emitter 1112Base 2223Collector 333J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified
ss8550t.pdf

SS8550TPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : -1.5 A1Collector-base voltage 23V(BR)CBO : - 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COL
Datasheet: 3CD910 , 3CG751 , 3DD5023 , 3DD5024 , 8050M , 8050T , 8050W , 8550M , D880 , 8550W , 9011M , 9012M , 9013M , 9014M-A , 9014T , 9014W , 9015M-A .
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History: C155 | DP030



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