HIT5609 Datasheet, Equivalent, Cross Reference Search
Type Designator: HIT5609
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92LM
HIT5609 Transistor Equivalent Substitute - Cross-Reference Search
HIT5609 Datasheet (PDF)
hit5609.pdf
HIT5609(3DG5609) NPN /SILICON NPN TRANSISTOR :, Purpose: Power amplifier and switching application, electronic governor applications. :, HIT5610(3CG5610) Features: Low saturation voltage, complementary pair with HIT5610(3CG5610). /Absolute maximum ratings(Ta=25
r07ds0448ej hit562-1.pdf
Preliminary Datasheet R07DS0448EJ0400HIT562 (Previous: REJ03G1503-0300)Rev.4.00Silicon PNP Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT468 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit
hit5610.pdf
HIT5610(3CG5610) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching electronic application, governor applications. :, HIT5609(3DG5609) Features: Low saturation voltage, complementary pair with HIT5609(3DG5609). /Absolute maximum ratings(Ta=25
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 40547
