L8550M Datasheet and Replacement
   Type Designator: L8550M
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625
 W
   Maximum Collector-Base Voltage |Vcb|: 30
 V
   Maximum Collector-Emitter Voltage |Vce|: 20
 V
   Maximum Emitter-Base Voltage |Veb|: 6
 V
   Maximum Collector Current |Ic max|: 1.5
 A
   Max. Operating Junction Temperature (Tj): 150
 °C
   Transition Frequency (ft): 100
 MHz
   Collector Capacitance (Cc): 15
 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
		   Package: 
SOT23
				
				  
				 
   - 
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L8550M Datasheet (PDF)
 ..1.  Size:407K  blue-rocket-elect
 l8550m.pdf 
						 
L8550M Rev.C Feb.-2015 DATA SHEET  / Descriptions SOT-23  PNP Silicon PNP transistor in a SOT-23 Plastic Package.  / Features  L8050M  Complementary pair with L8050M.  / Applications  Power amplifier applications.  / Equivalent Circuit  / Pinning 3 2 
 9.1.  Size:603K  blue-rocket-elect
 l8550.pdf 
						 
L8550(BR3CA8550K) Rev.C Feb.-2015 DATA SHEET  / Descriptions TO-92  PNP Silicon PNP transistor in a TO-92 Plastic Package.  / Features PC, IC , L8050(BR3DA8050K) High PC and IC, complementary pair with L8050(BR3DA8050K).  / Applications  2W  2W output amplifier of portable radios in cl
 9.2.  Size:84K  lrc
 l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
 9.3.  Size:89K  lrc
 l8550hplt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesPNP Silicon S-L8550HPLT1GSeriesFEATURE High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirem
 9.4.  Size:234K  lrc
 l8550plt1g l8550qlt1g l8550rlt1g l8550slt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
 9.5.  Size:84K  lrc
 l8550hrlt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
 9.6.  Size:202K  lrc
 l8550qlt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
 9.7.  Size:234K  lrc
 l8550plt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
 9.8.  Size:85K  lrc
 l8550hqlt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
 9.10.  Size:234K  lrc
 l8550plt1g l8550plt3g l8550qlt1g l8550qlt3g l8550rlt1g l8550rlt3g l8550slt1g l8550slt3g.pdf 
						 
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550PLT1G SeriesPNP SiliconS-L8550PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.312DEVICE MARKING AND ORDERING INFORMATIONSOT
 9.11.  Size:83K  lrc
 l8550hslt1g.pdf 
						 
LESHAN RADIO COMPANY, LTD.L8550HPLT1GGeneral Purpose TransistorsSeriesS-L8550HPLT1GPNP SiliconFEATURESeries High current capacity in compact package. Epitaxial planar type.3 PNP complement: L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
 9.12.  Size:978K  cn yongyutai
 l8550hq.pdf 
						 
L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto
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Keywords - L8550M transistor datasheet
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