ST2SA1661U Datasheet, Equivalent, Cross Reference Search
Type Designator: ST2SA1661U
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT89
ST2SA1661U Transistor Equivalent Substitute - Cross-Reference Search
ST2SA1661U Datasheet (PDF)
st2sa1661u.pdf
ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150
st2sa1663u.pdf
ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150
st2sa1666u.pdf
ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora
st2sa1213u.pdf
ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C
st2sa1012.pdf
ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollec
st2sa1900u.pdf
ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 ACollector Current (Pw = 20 ms) -ICP 2 A0.5 PC W Collector Power Dissipation2 1) Junction Temperature Tj
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
