ST2SA1666U Specs and Replacement
Type Designator: ST2SA1666U
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT89
ST2SA1666U Substitution
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ST2SA1666U datasheet
ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Base Current -IB 0.4 A 0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora... See More ⇒
ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 120 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 800 mA Base Current -IB 160 mA 0.5 Ptot W Total Power Dissipation 1 1) Junction Temperature Tj 150... See More ⇒
ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C... See More ⇒
Detailed specifications: ST13002T, ST13003, ST13003H, ST13003T, ST2SA1012, ST2SA1213U, ST2SA1661U, ST2SA1663U, BC546, ST2SA1900U, ST2SA2060U, ST2SA2071U, ST2SA683, ST2SA684, ST2SB1124U, ST2SB1132U, ST2SB1151T
Keywords - ST2SA1666U pdf specs
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