ST2SA1900U Specs and Replacement
Type Designator: ST2SA1900U
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT89
ST2SA1900U Substitution
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ST2SA1900U datasheet
ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 1 A Collector Current (Pw = 20 ms) -ICP 2 A 0.5 PC W Collector Power Dissipation 2 1) Junction Temperature Tj... See More ⇒
ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C... See More ⇒
ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec... See More ⇒
Detailed specifications: ST13003, ST13003H, ST13003T, ST2SA1012, ST2SA1213U, ST2SA1661U, ST2SA1663U, ST2SA1666U, TIP35C, ST2SA2060U, ST2SA2071U, ST2SA683, ST2SA684, ST2SB1124U, ST2SB1132U, ST2SB1151T, ST2SB1188U
Keywords - ST2SA1900U pdf specs
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History: TBC860
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