All Transistors. ST2SA2071U Datasheet

 

ST2SA2071U Datasheet, Equivalent, Cross Reference Search


   Type Designator: ST2SA2071U
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89

 ST2SA2071U Transistor Equivalent Substitute - Cross-Reference Search

   

ST2SA2071U Datasheet (PDF)

 ..1. Size:591K  semtech
st2sa2071u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 ACollector Current (Pw = 100 ms) -ICP 6 A0.5 PC W Collector Power Dissipation2 1

 7.1. Size:796K  semtech
st2sa2060u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 2 ACollector Current (Pulse) -ICP 3.5 ABase Current -IB 200 mA0.

 9.1. Size:396K  semtech
st2sa683 st2sa684.pdf

ST2SA2071U
ST2SA2071U

ST 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximu

 9.2. Size:688K  semtech
st2sa1213u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

 9.3. Size:564K  semtech
st2sa1663u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 9.4. Size:583K  semtech
st2sa1012.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollec

 9.5. Size:625K  semtech
st2sa1661u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1661U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 120 VCollector Emitter Voltage -VCEO 120 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 800 mABase Current -IB 160 mA0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 9.6. Size:618K  semtech
st2sa1666u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1666U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 2 ABase Current -IB 0.4 A0.5 Total Power Dissipation Ptot W 1 1) Junction Temperature Tj 150 Stora

 9.7. Size:558K  semtech
st2sa1900u.pdf

ST2SA2071U
ST2SA2071U

ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 ACollector Current (Pw = 20 ms) -ICP 2 A0.5 PC W Collector Power Dissipation2 1) Junction Temperature Tj

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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