ST2SD526 PDF and Equivalents Search

 ..1. Size:531K  semtech

 st2sd526.pdf

ST 2SD526 NPN Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 80 V Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 4 A Collector Current IC 0.4 A Base Current IB O Power Dissipation (Tc = 25 C) PC 30 W O Junctio... See More ⇒

 9.1. Size:551K  semtech

 st2sd1760u.pdf

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 W Collector Power Dissipation Junction Temperature TJ 150 Stor... See More ⇒

 9.2. Size:539K  semtech

 st2sd874u.pdf

ST 2SD874U NPN Silicon Epitaxial Planar Transistor for low frequency power amplification applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICP 1.5 A Collector Power Dissipation PC 1 W Junction Temperature T... See More ⇒

 9.3. Size:560K  semtech

 st2sd1664u.pdf

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te... See More ⇒

 9.4. Size:350K  semtech

 st2sd1691t.pdf

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter ... See More ⇒

 9.5. Size:391K  semtech

 st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te... See More ⇒

 9.6. Size:794K  semtech

 st2sd2391u.pdf

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 Storage Temperatu... See More ⇒

 9.7. Size:637K  semtech

 st2sd2150u.pdf

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature ... See More ⇒

 9.8. Size:535K  semtech

 st2sd882u.pdf

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T... See More ⇒

 9.9. Size:531K  semtech

 st2sd1766u.pdf

ST 2SD1766U NPN Silicon Epitaxial Planar Transistor Medium power amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current IC 2 A Peak Collector Current (Single pulse, Pw = 20 ms) ICP 2.5 A 0.5 Collector Power Dissipation PC W 2 1) Junction T... See More ⇒

 9.10. Size:297K  semtech

 st2sd882u-p.pdf

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector... See More ⇒

 9.11. Size:439K  semtech

 st2sd882ht.pdf

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒

 9.12. Size:476K  semtech

 st2sd1163a.pdf

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge ... See More ⇒

 9.13. Size:386K  semtech

 st2sd882t.pdf

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒

 9.14. Size:382K  globaltech semi

 gst2sd965.pdf

GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 22V amplifier and switch. Collector Current 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)... See More ⇒