All Transistors. L2SC3838LT1G Datasheet

 

L2SC3838LT1G Datasheet and Replacement


   Type Designator: L2SC3838LT1G
   SMD Transistor Code: AD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 11 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3200 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT23
 

 L2SC3838LT1G Substitution

   - BJT ⓘ Cross-Reference Search

   

L2SC3838LT1G Datasheet (PDF)

 ..1. Size:78K  lrc
 l2sc3838lt1g.pdf pdf_icon

L2SC3838LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

 ..2. Size:78K  lrc
 l2sc3838lt1g l2sc3838lt3g.pdf pdf_icon

L2SC3838LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

 6.1. Size:78K  lrc
 l2sc3838qlt1g.pdf pdf_icon

L2SC3838LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

 6.2. Size:58K  lrc
 l2sc3838nlt1g.pdf pdf_icon

L2SC3838LT1G

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO

SHOW MORE

Datasheet: L2SC2412KQMT1G , L2SC2412KRLT1G , L2SC2412KRMT1G , L2SC2412KSLT1G , L2SC2412KSMT1G , L2SC3356LT1G , L2SC3356WT1G , L2SC3837LT1G , 2SC2655 , L2SC3838NLT1G , L2SC4081QT1G , L2SC4081RT1G , L2SC4081ST1G , L2SC4083NWT1G , L2SC4083PT1G , L2SC4083PWT1G , L2SC4083QWT1G .

History: ESM261 | L8550QLT3G | OC309-1

Keywords - L2SC3838LT1G transistor datasheet

 L2SC3838LT1G cross reference
 L2SC3838LT1G equivalent finder
 L2SC3838LT1G lookup
 L2SC3838LT1G substitution
 L2SC3838LT1G replacement

 

 
Back to Top

 


 
.