All Transistors. L8050HRLT1G Datasheet

 

L8050HRLT1G Datasheet and Replacement


   Type Designator: L8050HRLT1G
   SMD Transistor Code: 1HE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT23
 

 L8050HRLT1G Substitution

   - BJT ⓘ Cross-Reference Search

   

L8050HRLT1G Datasheet (PDF)

 ..1. Size:88K  lrc
 l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf pdf_icon

L8050HRLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 ..2. Size:84K  lrc
 l8050hrlt1g.pdf pdf_icon

L8050HRLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 ..3. Size:84K  lrc
 l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf pdf_icon

L8050HRLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

 8.1. Size:88K  lrc
 l8050hqlt1g.pdf pdf_icon

L8050HRLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

SHOW MORE

Datasheet: L2SC5658RM3T5G , L2SD1781KRLT1G , L2SD2114KVLT1G , L2SD2114KWLT1G , L2SD882P , L2SD882Q , L8050HPLT1G , L8050HQLT1G , D667 , L8050PLT1G , L8050QLT1G , L8550HPLT1G , L8550HQLT1G , L8550HRLT1G , L8550PLT1G , L8550QLT1G , L9012PLT1G .

History: AC120V | CHEMH1GP | CHT2222TGP | T1684 | 2SD1776 | T1788 | MMBT6429LT1G

Keywords - L8050HRLT1G transistor datasheet

 L8050HRLT1G cross reference
 L8050HRLT1G equivalent finder
 L8050HRLT1G lookup
 L8050HRLT1G substitution
 L8050HRLT1G replacement

 

 
Back to Top

 


 
.