All Transistors. L8550HQLT1G Datasheet

 

L8550HQLT1G Datasheet and Replacement


   Type Designator: L8550HQLT1G
   SMD Transistor Code: 1HD
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT23
 

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L8550HQLT1G Datasheet (PDF)

 ..1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

L8550HQLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 ..2. Size:85K  lrc
l8550hqlt1g.pdf pdf_icon

L8550HQLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir

 ..3. Size:84K  lrc
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf pdf_icon

L8550HQLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 7.1. Size:978K  cn yongyutai
l8550hq.pdf pdf_icon

L8550HQLT1G

L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TA1920 | KZT3906 | KXT5401

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