L8550HQLT1G Datasheet and Replacement
Type Designator: L8550HQLT1G
SMD Transistor Code: 1HD
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT23
L8550HQLT1G Substitution
L8550HQLT1G Datasheet (PDF)
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
l8550hqlt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site1and Control Change Requir
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir
l8550hq.pdf

L8550HQGeneral Purpose TransistorsPNP SiliconFEATURECOLLECTOR High current capacity in compact package. 3 Epitaxial planar type. We declare that the material of product compliance with RoHS requirements. 1BASE2EMITTERMAXIMUM RATINGSRating Symbol Max UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5 VCollecto
Datasheet: L2SD882P , L2SD882Q , L8050HPLT1G , L8050HQLT1G , L8050HRLT1G , L8050PLT1G , L8050QLT1G , L8550HPLT1G , B647 , L8550HRLT1G , L8550PLT1G , L8550QLT1G , L9012PLT1G , L9012QLT1G , L9012RLT1G , L9012SLT1G , L9013PLT1G .
History: KZT3906 | 92PU45 | MJF15030G | 2SC2960 | TA2735 | MMBTA92-AU
Keywords - L8550HQLT1G transistor datasheet
L8550HQLT1G cross reference
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History: KZT3906 | 92PU45 | MJF15030G | 2SC2960 | TA2735 | MMBTA92-AU



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