LBC807-16LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBC807-16LT1G
SMD Transistor Code: 5A1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
LBC807-16LT1G Transistor Equivalent Substitute - Cross-Reference Search
LBC807-16LT1G Datasheet (PDF)
lbc807-16lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
lbc807-16wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other
lbc807-16dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4
lbc807-25lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia
lbc807-40wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC807-40WT1GDEVICE MARKING AND ORDERING INFORMATIONS-LBC807-40WT1GDevice Marking Package Shipping LBC807-40WT1GYL SOT-323 3000/Tape&ReelS-
lbc807-25wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25wt1g lbc807-25wt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-40dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC807-40DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
lbc807-40wt1g lbc807-40wt3g.pdf
LBC807-40WT1GS-LBC807-40WT1GPNP Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
lbc807-25dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC807-40DMT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
