2N6482 Datasheet. Specs and Replacement

Type Designator: 2N6482  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: X21

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2N6482 datasheet

 9.1. Size:151K  motorola

2n6487 2n6488 2n6490 2n6491.pdf pdf_icon

2N6482

Order this document MOTOROLA by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 Complementary Silicon Plastic Power Transistors * 2N6488 PNP . . . designed for use in general purpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490 hFE = 20 150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc 2N6491* Collector Emitter Sustaining... See More ⇒

 9.2. Size:52K  st

2n6487 2n6488 2n6490.pdf pdf_icon

2N6482

2N6487 2N6488/2N6490 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low 3 2 frequency switching applications. 1 The 2N6487 complementary type is 2N6490. ... See More ⇒

 9.3. Size:75K  njs

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2N6482

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 9.4. Size:66K  central

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2N6482

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

Detailed specifications: 2N6475, 2N6476, 2N6477, 2N6478, 2N6478A, 2N6479, 2N6480, 2N6481, 2N4401, 2N6486, 2N6487, 2N6488, 2N6489, 2N649, 2N6490, 2N6491, 2N6492

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