LBC817-25WT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBC817-25WT1G
SMD Transistor Code: 6B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SC70
LBC817-25WT1G Transistor Equivalent Substitute - Cross-Reference Search
LBC817-25WT1G Datasheet (PDF)
lbc817-25wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-25WT1G3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V CEO 45 VCollectorBase Voltage V CBO 50 VSC-70 EmitterBase Voltage V EBO 5.0 VCollector Current Continuous I C 500 mAdcTHERMAL CHARACTERISTICS
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-25dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g lbc817-16dpmt3g lbc817-25dpmt3g lbc817-40dpmt3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-16lt1g lbc817-25lt1g lbc817-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin
lbc817-25lt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16LT1GLBC817-25LT1GGeneral Purpose TransistorsLBC817-40LT1GNPN SiliconS-LBC817-16LT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40LT1G3MA
lbc817-25dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteS-LBC817-25DMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
