All Transistors. LBC847BWT1G Datasheet

 

LBC847BWT1G Datasheet and Replacement


   Type Designator: LBC847BWT1G
   SMD Transistor Code: 1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC70
 

 LBC847BWT1G Substitution

   - BJT ⓘ Cross-Reference Search

   

LBC847BWT1G Datasheet (PDF)

 ..1. Size:391K  lrc
lbc847bwt1g.pdf pdf_icon

LBC847BWT1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb FreeS-LBC846AWT1G,BWT1GDevice Package ShippingS-LBC847AWT1G,BWT1GLBC846AWT1G SC-703000/Tape&ReelS-LBC846AWT1GCWT1GLBC846AWT3G SC-70

 ..2. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf pdf_icon

LBC847BWT1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847BWT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.2. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf pdf_icon

LBC847BWT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

Datasheet: LBC846BPDW1T1G , LBC846BWT1G , LBC847ALT1G , LBC847AWT1G , LBC847BDW1T1G , LBC847BLT1G , LBC847BPDW1T1G , LBC847BTT1G , 2SC2073 , LBC847CDW1T1G , LBC847CLT1G , LBC847CWT1G , LBC848ALT1G , LBC848BDW1T1G , LBC848BLT1G , LBC848BPDW1T1G , LBC848BWT1G .

Keywords - LBC847BWT1G transistor datasheet

 LBC847BWT1G cross reference
 LBC847BWT1G equivalent finder
 LBC847BWT1G lookup
 LBC847BWT1G substitution
 LBC847BWT1G replacement

 

 
Back to Top

 


 
.