LBC850BLT1G Specs and Replacement
Type Designator: LBC850BLT1G
SMD Transistor Code: 2E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
- BJT ⓘ Cross-Reference Search
LBC850BLT1G datasheet
..1. Size:402K lrc
lbc850blt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha... See More ⇒
..3. Size:404K lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang... See More ⇒
7.1. Size:278K lrc
lbc850bwt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846AWT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO Vdc SOT 323 /SC 70... See More ⇒
8.1. Size:403K lrc
lbc850clt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang... See More ⇒
9.2. Size:158K lrc
lbc858alt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit... See More ⇒
9.3. Size:178K lrc
lbc858cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is 6 5 designed for low power surface mount applications. 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A... See More ⇒
9.4. Size:176K lrc
lbc857bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 Device Marking SOT-36... See More ⇒
9.5. Size:135K lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒
9.6. Size:276K lrc
lbc858cwt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. CWT1G Features S-LBC856AWT1G, BWT1G We declare that the material of product c... See More ⇒
9.8. Size:235K lrc
lbc856blt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 LBC857CLT1G ESD Rating Human Body Model >4000 V S-LBC857CLT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control... See More ⇒
9.9. Size:158K lrc
lbc858blt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit... See More ⇒
9.10. Size:176K lrc
lbc858bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A... See More ⇒
9.11. Size:176K lrc
lbc857cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an... See More ⇒
9.12. Size:278K lrc
lbc858bwt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. Features S-LBC856AWT1G, BWT1G We declare that the material of product c... See More ⇒
9.13. Size:134K lrc
lbc857btt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒
9.14. Size:275K lrc
lbc857cwt1g.pdf 

LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G General Purpose Transistors LBC857AWT1G, BWT1G CWT1G PNP Silicon LBC858AWT1G, BWT1G These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ S-LBC856AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. S-LBC857AWT1G, BWT1G Features CWT1G We declare t... See More ⇒
9.16. Size:233K lrc
lbc856alt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch... See More ⇒
9.18. Size:182K lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A... See More ⇒
9.20. Size:284K lrc
lbc857awt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon CWT1G These transistors are designed for general purpose LBC858AWT1G, BWT1G amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features S-LBC857AWT1G, BWT1G We declare that the... See More ⇒
9.21. Size:194K lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an... See More ⇒
9.22. Size:160K lrc
lbc857clt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series Moisture Sensitivity Level 1 S-LBC857CLT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒
9.23. Size:148K lrc
lbc857blt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series Moisture Sensitivity Level 1 S-LBC857CLT1G ESD Rating Human Body Model >4000 V Series ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒
9.24. Size:158K lrc
lbc858clt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series PNP Silicon S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site an... See More ⇒
9.25. Size:182K lrc
lbc856bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A... See More ⇒
9.26. Size:278K lrc
lbc856bwt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒
9.27. Size:159K lrc
lbc857alt1g.pdf 

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒
9.28. Size:353K lrc
lbc856blt1g lbc856blt3g.pdf 

LBC856BLT1G S-LBC856BLT1G General Purpose Transistors PNP Silicon 1. FEATURES Moisture Sensitivity Level 1 SOT23(TO-236) ESD Rating Human Body Model >4000 V Machine Model >400 V We declare that the material of product compliance with 3 COLLECTOR RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 1 unique si... See More ⇒
9.30. Size:279K lrc
lbc857bwt1g.pdf 

LESHAN RADIO COMPANY, LTD. LBC856AWT1G,BWT1G General Purpose Transistors LBC857AWT1G,BWT1G PNP Silicon CWT1G LBC858AWT1G,BWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ CWT1G SC 70 which is designed for low power surface mount S-LBC856AWT1G,BWT1G applications. S-LBC857AWT1G,BWT1G Features We declare that the mat... See More ⇒
Detailed specifications: LBC848BDW1T1G, LBC848BLT1G, LBC848BPDW1T1G, LBC848BWT1G, LBC848CDW1T1G, LBC848CLT1G, LBC848CPDW1T1G, LBC848CWT1G, B772, LBC850BWT1G, LBC850CLT1G, LX8050QLT1G, LBSS4240LT1G, LBSS5240LT1G, LH8050QLT1G, LH8550QLT1G, LMBTH10LT1G
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