LBC856BWT1G PDF and Equivalents Search

 

LBC856BWT1G Specs and Replacement

Type Designator: LBC856BWT1G

SMD Transistor Code: 3B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SC70

 LBC856BWT1G Substitution

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LBC856BWT1G datasheet

 ..1. Size:254K  lrc

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LBC856BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒

 ..2. Size:278K  lrc

lbc856bwt1g.pdf pdf_icon

LBC856BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product ... See More ⇒

 7.1. Size:159K  lrc

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LBC856BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒

 7.2. Size:234K  lrc

lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

LBC856BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch... See More ⇒

Detailed specifications: LH8050QLT1G, LH8550QLT1G, LMBTH10LT1G, LMBTH10QLT1G, LMBTH10WT1G, LBC856ALT1G, LBC856BDW1T1G, LBC856BLT1G, 9014, LBC857ALT1G, LBC857AWT1G, LBC857BDW1T1G, LBC857BLT1G, LBC857BTT1G, LBC857BWT1G, LBC857CDW1T1G, LBC857CLT1G

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